2011/09/ 26 ver.3 page 1 SPP5413 p-channel enhancement mode mosfet description applications the SPP5413 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. the SPP5413 has b een designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. z power management in note book z powered system z dc/dc converter z load switch features pin configuration to-252 part marking ? -40v/-10a,r ds(on) = 26m ? @v gs =- 10v ? -40v/- 8a,r ds(on) = 36m ? @v gs =- 4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-252 package design
2011/09/ 26 ver.3 page 2 SPP5413 p-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPP5413t252rgb to-252 SPP5413 SPP5413t252rgb : tape reel ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -40 v gate ?source voltage v gss 20 v t a =25 -18 continuous drain current(t j =150 ) t a =70 i d -10 a pulsed drain current i dm -30 a continuous source current(diode conduction) i s -2.3 a t a =25 2.8 power dissipation t a =70 p d 1.8 w avalanche energy with single pulse ( tj=25 , l = 0.14mh , i as = 43a , v dd = 20v. ) eas 129 mj operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 70 /w
2011/09/ 26 ver.3 page 3 SPP5413 p-channel enhancement mode mosfet electrical characteristics (t a =25 unless o therwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -40 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.8 -2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =-32v,v gs =0v -1 zero gate voltage drain current i dss v ds =-32v,v gs =0v t j =55 -10 ua on-state drain current i d(on) v ds = -5v,v gs =-4.5v -10 a v gs =-10v,i d =-10a 0.021 0.026 drain-source on-resistance r ds(on) v gs =-4.5v,i d =- 8a 0.030 0.036 ? forward transconductance gfs v ds =-15v,i d =-5.7a 13 s diode forward voltage v sd i s =-2.3a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 13 20 gate-source charge q gs 4.5 gate-drain charge q gd v ds =-20v,v gs =-4.5v i d = -5.0a 6.5 nc input capacitance c iss 1100 output capacitance c oss 145 reverse transfer capacitance c rss v ds =-20v,v gs =0v f=1mhz 115 pf t d(on) 40 80 turn-on time t r 55 100 t d(off) 30 60 turn-off time t f v dd =-20v,r l =4 ? i d -5.0a,v gen =-4.5v r g =1 ? 12 20 ns
2011/09/ 26 ver.3 page 4 SPP5413 p-channel enhancement mode mosfet typical characteristics
2011/09/ 26 ver.3 page 5 SPP5413 p-channel enhancement mode mosfet typical characteristics
2011/09/ 26 ver.3 page 6 SPP5413 p-channel enhancement mode mosfet typical characteristics
2011/09/ 26 ver.3 page 7 SPP5413 p-channel enhancement mode mosfet typical characteristics
2011/09/ 26 ver.3 page 8 SPP5413 p-channel enhancement mode mosfet to-252 package outline
2011/09/ 26 ver.3 page 9 SPP5413 p-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178
2011/09/ 26 ver.3 page 10 SPP5413 p-channel enhancement mode mosfet fax: 886-2-2655-8468 ?http://www.syncpower.com
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